參數(shù)資料
型號(hào): 2SK1958-T1-A
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 57K
代理商: 2SK1958-T1-A
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
The 2SK1958 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 1.5 V
Because of its high input impedance, there’s no need to
consider drive current
Since bias resistance can be omitted, the number of
components required can be reduced
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
16
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
±0.2
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Document No. D11221EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
Marking: G21
1.25 ±0.1
2.1 ±0.1
D
0.3
+0.1
–0
0.3
+0.1
–0
G
S
2.0
±0.2
0.65
0.15
+0.1
–0.05
0
to
0.1
0.3
0.9
±0.1
Marking
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
相關(guān)PDF資料
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2SK1959-AZ 2 A, 16 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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