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參數資料
| 型號： | 2SK1959-AZ |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 16 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK1959-AZ |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
The 2SK1959 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 1.5 V
Low ON resistance
RDS(on) = 3.2
MAX. @ VGS = 1.5 V, ID = 50 mA
RDS(on) = 0.5
MAX. @ VGS = 4.0 V, ID = 1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
16
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID(DC)
±2.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
±4.0
A
Total Power Dissipation
PT
16 cm2
× 0.7 mm ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Document No. D11222EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42 ±0.06
0.8
MIN.
1.5
0.47
±0.06
3.0
2.5
±0.1
4.0
±0.25
0.41
+0.03
–0.05
1.5 ±0.1
S
D
G
0.42 ±0.06
Marking: NQ
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1960-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1960T1AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1960-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SK198 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1981-01SC | 制造商:Fuji Electric 功能描述: |
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