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參數(shù)資料
| 型號(hào)： | 2SK1764KYTR-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 0K |
| 代理商： | 2SK1764KYTR-E |
2SK1764
Rev.2.00 Sep 07, 2005 page 4 of 6
80
Case Temperature TC (°C)
120
40
0
0.2
0.4
0.6
0.8
1.0
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
ID = 2 A
Pulse Test
VGS = 4 V
VGS = 10 V
0.5 A
1 A
0.5 A
2 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
5
Drain Current ID (A)
2
Forward
Transfer
Admittance
y
fs
(S)
TC = 25°C
VDS = 10 V
Pulse Test
–25
°C
75
°C
1000
500
200
100
50
20
10
0.05
0.1
0.5
5
Reverse Drain Current IDR (A)
1.0
0.2
2
Body to Drain Diode Reverse
Recovery Time
Reverse
Recovery
Time
t
rr
(ns)
di/dt = 50 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
1000
300
100
30
3
1
Capacitance
C
(pF)
010
20
50
Drain to Source Voltage VDS (V)
30
10
40
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
02
6
8
Gate Charge Qg (nc)
4
20
16
12
8
4
Dynamic Input Characteristics
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
10
0
VDS
VGS
VDD = 50 V
10 V
25 V
VDD = 50 V
25 V
10 V
ID = 1.5 A
Switching Characteristics
100
50
20
10
2
1
0.05
0.1
0.5
5
Drain Current ID (A)
1.0
0.2
2
Switching
Time
t
(ns)
5
td (off)
tf
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1 %
td (on)
tr
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