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參數(shù)資料
| 型號(hào)： | 2SK1764TR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK1764TR |
Application
Low frequency amplifier
High speed switching
Features
Low on–resistance
High speed switching
4 V Gate drive device can be driven from 5 V
source
Suitable for switchingregulator, DC–DC
converter
2, 4
1
3
1
2
3
4
1. Gate
2. Drain
3. Source
4. Drain
UPAK
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
±2
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*±4
A
———————————————————————————————————————————
Channel power dissipation
Pch**
1
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW
≤ 100 s, duty cycle ≤ 10 %
**
Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
***
Marking is "KY".
2SK1764
Silicon N Channel MOS FET
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PDF描述 |
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| 2SK1764TR | SMALL SIGNAL, FET |
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| 2SK1772HYTR-E | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1775 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1771(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R |
| 2SK1772-HY(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1773-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK1775-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 8A TO-3P |
| 2SK177T1 | 制造商:NEC 功能描述:New |
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