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參數(shù)資料
| 型號： | 2SK1764KYTR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 0K |
| 代理商： | 2SK1764KYTR-E |
2SK1764
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
8
4
2
10
Drain
Current
I
D
(A)
0
1
2
3
4
0
5
VGS = 2.5 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
4.5 V
7 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
1
2
3
4
5
0
Drain
Current
I
D
(A)
–25
°C
TC= 25°C
75
°C
VDS = 10 V
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
0.4
0.6
0.8
1.0
0
0.2
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 0.5 A
2 A
1 A
0.5
Drain Current ID (A)
1.0
0.2
0.1
5
0.2
0.5
1.0
2
5
0.05
0.1
0.05
2
Static Drain to Source On State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
1.6
1.2
0.8
0.4
0
Channel
Power
Dissipation
Pch**
(W)
(**
on
the
almina
ceramic
board)
50
100
150
200
Ambient Temperature
Ta (
°C)
Maximum Channel Power
Dissipation Curve
0.1
Drain
Current
I
D
(A)
Drain to Source Voltage
VDS
(V)
10
3
1.0
0.3
0.1
0.03
0.01
0.3
1.0
3
10
30
100
Operati
on
in
this
area
is
limite
d
by
R
DS(on)
Ta = 25
°C
1 ms
PW
=
10
ms
(1sh
ot)
DC
operation
Safe Operation Area
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