參數(shù)資料
型號(hào): 2SK1671
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 49K
代理商: 2SK1671
2SK1671
6
50
2.0
Source to Drain Voltage V
SD
(V)
R
D
40
0.4
0.8
1.6
0
20
30
0
10
1.2
Pulse Test
0, –5 V
V
GS
= 10 V
Reverse Drain Current vs.
Source to Drain Voltage
T
PW
P
DM
D =
T
PW
θ
ch–c (t) =
γ
S
(t) ·
θ
ch–c
θ
ch–c = 1.0°C/W, T
C
= 25°C
3
Pulse Width PW (s)
N
γ
S
1.0
0.1
0.3
D = 1
10
μ
0.03
0.01
100
μ
10 m
100 m
1
10
1 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
V
=
R
L
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
10%
90%
t
d (off)
90%
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