參數(shù)資料
型號(hào): 2SK1671
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁數(shù): 4/8頁
文件大?。?/td> 49K
代理商: 2SK1671
2SK1671
4
5
8
20
Gate to Source Voltage V
GS
(V)
D
D
4
1
4
12
16
0
2
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10 A
5 A
I
D
= 20 A
Pulse Test
0.5
2
100
Drain Current I
D
(A)
S
R
D
)
0.2
0.01
20
1
0.05
0.1
Static Drain to Source on State
Resistance vs. Drain Current
0.02
0.005
10
V
GS
= 10, 15 V
Pulse Test
5
50
0.2
40
160
Case Temperature T
C
(°C)
S
R
D
)
0.16
0.04
0
80
120
0
–40
0.08
0.12
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 30 A
V
GS
= 10 V
Pulse Test
10 A
20 A
50
1
50
Drain Current I
D
(A)
F
y
20
2
0.5
2
10
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
V
= 10 V
Pulse Test
1
5
20
75°C
T
C
= –25°C
25°C
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