參數(shù)資料
型號: 2SK1671
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 5/8頁
文件大小: 49K
代理商: 2SK1671
2SK1671
5
200
5
R
r
100
10
0.5
20
50
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
μ
s, V
GS
= 0
Ta = 25°C, Pulse Test
5
1
Reverse Drain Current I
DR
(A)
10
20
2
500
50
10,000
20
50
Drain to Source Voltage V
DS
(V)
C
100
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
V
= 0
f = 1 MHz
1,000
500
80
200
Gate Charge Qg (nc)
D
D
400
40
120
0
160
300
200
100
I
= 30 A
Pulse Test
V
DS
Dynamic Input Characteristics
V
DD
= 50V
100 V
200 V
V
GS
20
G
G
16
12
8
4
0
V
DD
= 200 V
100 V
50 V
500
2
50
Drain Current I
D
(A)
S200
1
5
20
5
50
100
0.5
10
Switching Characteristics
t
f
t
d (off)
t
r
V
= 10 V, V
=
PW = 2
μ
s, duty < 1%
t
d (on)
10
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