參數(shù)資料
型號(hào): 2SK1666
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁數(shù): 5/9頁
文件大小: 46K
代理商: 2SK1666
2SK1666
5
Gate to Source Voltage V
GS
(V)
D
D
0
2
10
6
4
8
0.4
0.8
1.2
1.6
2.0
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
I
D
= 10 A
Pulse Test
30 A
20 A
0.5
10
Drain Current I
D
(A)
200
S
R
D
)
0.2
0.01
5
20
100
2
0.05
0.1
Static Drain to Source on State
Resistance vs. Drain Current
0.02
0.005
50
V
GS
= 10 V
V
GS
= 4 V
Pulse Test
0.1
40
160
Case Temperature T
C
(
°
C)
S
R
D
S
)
0.08
0.02
0
80
120
0
–40
0.04
0.06
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 30 A
20 A
10 A
30 A
10 A, 20 A
V
GS
= 4 V
V
GS
= 10 V
Pulse Test
Ta = –25
°
C
Pulse Test
V
DS
= 10 V
25
°
C
75
°
C
100
1
20
50
Drain Current I
D
(A)
F
y
20
50
2
0.5
2
10
5
10
Forward Transfer Admittance
vs. Drain Current
1
5
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