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參數(shù)資料
| 型號(hào)： | 2SK1623STL-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SK1623STL-E |
2SK1623(L), 2SK1623(S)
Rev.3.00 Jan 10, 2006 page 4 of 7
80
120
40
0
0.04
0.08
0.12
0.16
0.20
–40
0
160
Static Drain to Source on State Resistance
vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.2
0.5
1
2
5
20
Drain Current ID (A)
10
Forward
Transfer
Admittance
y
fs
(S)
0.5
1000
200
100
50
20
10
0.5
1
5
50
Reverse Drain Current IDR (A)
10
2
20
Body to Drain Diode Reverse
Recovery Time
Reverse
Recovery
Time
t
rr
(ns)
500
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
100
10
Capacitance
C
(pF)
010
20
50
Drain to Source Voltage VDS (V)
30
40
100
80
60
40
20
0
020
60
80
Gate Charge Qg (nc)
40
20
16
12
8
4
Dynamic Input Characteristics
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
100
0
Switching Characteristics
1000
500
200
100
20
10
0.5
1
5
50
Drain Current ID (A)
10
2
20
Switching
Time
t
(ns)
50
Case Temperature
Tc
(°C)
25°C
75°C
VDS = 10 V
Pulse Test
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
Pulse Test
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
VGS
VDS
ID = 20 A
tf
tr
td(off)
td(on)
VDD = 25 V
50 V
80 V
VDD = 80 V
50 V
25 V
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
Tc = –25°C
ID = 20 A
10 V
VGS = 4 V
Pulse Test
5 A, 10 A
10 A
20 A
5 A
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