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參數(shù)資料
| 型號(hào)： | 2SK1623STL-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 102K |
| 代理商： | 2SK1623STL-E |
2SK1623(L), 2SK1623(S)
Rev.3.00 Jan 10, 2006 page 3 of 7
Main Characteristics
50
100
0
0150
20
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
40
60
Maximum Safe Operation Area
Drain
Current
I
D
(A)
300
100
30
3
100
10
0.3
1
30
0.1
Drain to Source Voltage VDS (V)
10
1000
3
1
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
20
16
12
8
4
50
40
30
20
10
0
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
0
5
4
8
12
16
20
0
Drain
Current
I
D
(A)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
0
10
0.8
1.2
1.6
2.0
0
0.4
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
20
Drain Current ID (A)
50
10
5200
0.02
0.05
0.1
0.2
0.5
2
0.01
0.005
100
Static Drain to Source on State Resistance
vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Case Temperature
Tc (°C)
4 V
3 V
3.5 V
VGS = 2.5 V
25°C
Operation in
this area is
limited by RDS (on)
Pulse Test
VDS = 10 V
Pulse Test
Ta = 25°C
10 A
5 A
ID = 20 A
10 V
VGS = 4 V
Pulse Test
10
s
1 ms
P
W
= 10
ms
(1
Shot)
DC
Operation
(Tc
=
25°C)
100
s
7 V
–25°C
10 V
Tc = 75°C
5 V
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