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參數(shù)資料
| 型號： | 2SK1623STL-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SK1623STL-E |
2SK1623(L), 2SK1623(S)
Rev.3.00 Jan 10, 2006 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V(BR)DSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
Drain peak current
ID(pulse)
*1
80
A
Body to drain diode reverse drain current
IDR
20
A
Channel dissipation
Pch
*2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 80 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
—
0.065
0.085
ID = 10 A, VGS = 10 V *
3
Static drain to source on state
resistance
RDS(on)
—
0.085
0.12
ID = 10 A, VGS = 4 V *
3
Forward transfer admittance
|yfs|
10
16
—
S
ID = 10 A, VDS = 10 V *
3
Input capacitance
Ciss
—
1300
—
pF
Output capacitance
Coss
—
540
—
pF
Reverse transfer capacitance
Crss
—
160
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
12
—
ns
Rise time
tr
—
100
—
ns
Turn-off delay time
td(off)
—
300
—
ns
Fall time
tf
—
150
—
ns
ID = 10 A, VGS = 10 V,
RL = 3
Body to drain diode forward voltage
VDF
—
1.3
—
V
IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
300
—
ns
IF = 20 A, VGS = 0,
diF/dt = 50 A/
s
Note:
3. Pulse test
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