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參數(shù)資料
| 型號： | 2SK1303 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SK1303 |
2SK1303
5
410
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
4
1
26
8
0
2
3
ID = 50 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
20 A
10 A
0.5
10
200
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.2
0.01
5
20
100
2
0.05
0.1
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 4 V
Pulse Test
10 V
0.02
0.005
50
0.20
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
D
S
(on)
(
)
0.16
0.04
0
80
120
0
0.08
0.12
Static Drain to Source on State
Resistance vs. Temperature
10 A
Pulse Test
ID = 20 A
–40
VGS = 10 V
VGS = 4 V
20 A
50 A
10 A
50
250
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
20
2
1.0
20
5
10
Forward Transfer Admittance
vs. Drain Current
–25°C
VGS = 10 V
Pulse Test
1.0
TC = 25°C
75°C
10
5
0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1304 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1305-E | 10 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1306-E | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1306 | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1310A | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1303(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1303-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1304 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1304-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1305 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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