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參數(shù)資料
| 型號(hào)： | 2SK1303 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 65K |
| 代理商： | 2SK1303 |
2SK1303
6
5,000
5
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
2,000
200
1.0
10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.5
100
20
di/dt = 50 A/
s, Ta = 25°C
VGS = 0
Pulse Test
2
Crss
Coss
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
100
10
30
40
10
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
0
Ciss
100
40
100
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
80
20
60
80
0
40
60
VDS
25 V
20
16
4
0
8
12
VDD = 25 V
50 V
80 V
ID = 30 A
50 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
VDD = 80 V
250
Drain Current ID (A)
Switching
Time
t
(ns)
1,000
100
1.0
5
20
200
500
VGS = 10 V, VDD 30 V
PW = 2
s, duty < 1%
0.5
50
10
Switching Characteristics
td (off)
tr
td (on)
10
=
.
tf
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PDF描述 |
|---|---|
| 2SK1304 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1305-E | 10 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1306-E | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1306 | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1310A | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1303(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1303-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1304 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1304-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1305 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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