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參數(shù)資料
| 型號： | 2SK1303 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SK1303 |
2SK1303
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.05
0.06
I
D = 15 A, VGS = 10 V *
1
—
0.06
0.09
I
D = 15 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
13
22
—
S
I
D = 15 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1750
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
710
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
180
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 15 A, VGS = 10 V,
Rise time
t
r
—
120
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
390
—
ns
Fall time
t
f
—
195
—
ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 30 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
360
—
ns
I
F = 30 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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| 2SK1306-E | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1303(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1303-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1304 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1304-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1305 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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