參數(shù)資料
型號(hào): 2SK1167
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/7頁
文件大?。?/td> 52K
代理商: 2SK1167
2SK1167, 2SK1168
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1167 V
(BR)DSS
450
V
I
D
= 10 mA, V
GS
= 0
2SK1168
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
Zero gate voltage
drain current
2SK1167 I
DSS
2SK1168
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
Static Drain to source 2SK1167 R
DS(on)
on state resistance
0.25
0.36
1
2SK1168
0.30
0.40
Forward transfer admittance
|yfs|
8
13
S
I
D
= 8 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
2050
pF
Output capacitance
Coss
600
pF
Reverse transfer capacitance
Crss
75
pF
Turn-on delay time
t
d(on)
30
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Rise time
t
r
t
d(off)
t
f
V
DF
110
ns
Turn-off delay time
150
ns
Fall time
70
ns
Body to drain diode forward
voltage
1.0
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
500
ns
I
F
= 15 A, V
= 0,
di
F
/dt = 100 A/
μ
s
相關(guān)PDF資料
PDF描述
2SK1168 Silicon N-Channel MOS FET(N溝道MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1167-E 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS 制造商:Renesas 功能描述:Trans MOSFET N-CH 450V 15A 3-Pin(3+Tab) TO-3P
2SK1168 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
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