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參數(shù)資料
| 型號(hào)： | 2SJ557 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ557 |
Data Sheet D13292EJ1V0DS00
4
2SJ557
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
TA = 125C
100
300
200
500
400
VGS =
4.5 V
75C
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
50
TA = 125C
100
200
150
250
VGS =
10 V
75C
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature -C
ID =
1.0 A
50
0
50
100
150
50
150
100
350
250
300
200
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
m
10 V
VGS =
4.0 V
4.5 V
0
200
100
300
400
500
4
8
12
16
20
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
m
VGS - Gate to Source Voltage - V
ID =
1.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss,
Coss,
Crss
-
Capacitance
-
pF
10
100
1000
1
10
100
f = 1 MHz
VGS = 0V
Ciss
Crss
Coss
0.1
1
10
ID - Drain Current - A
td
(on)
,tr,
td
(off)
,tf
-
Swwitchig
Time
-
ns
1000
100
10
1
tr
SWITCHING CHARACTERISTICS
VDD =
10V
VGS(on) =
10V
RG = 10
tf
td(off)
td(on)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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