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參數(shù)資料
| 型號： | 2SJ557 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ557 |
Data Sheet D13292EJ1V0DS00
3
2SJ557
TYPICAL CHARACTERISTICS (TA = 25°C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Der
ating
F
actor
-
%
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
10
100
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
0.01
5 s
100
ms
10
ms
PW
=1
ms
RDS(on)
Limited
(@V
GS
=
10
V)
ID (pulse)
ID (DC)
Single Pulse
Mounted on FR-4 Board of
50mm x 50mm x 1.6mm
0.01
0.001
0.0001
0.00001
1
0
2
3
4
5
10
1
0.1
VGS - Gate to Sorce Voltage - V
25C
25C
75C
TA = 125C
VDS =
10 V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS =
10 V
ID =
1 mA
50
100
0
150
2.0
1.6
1.8
1.4
1.2
1
10
0.1
VDS =
10V
TA =
25 C
25 C
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
1
10
0.1
0.01
100
75 C
125 C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
200
100
TA = 125C
75C
25C
25C
300
400
500
VGS =
4.0 V
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