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參數(shù)資料
| 型號(hào)： | 2SJ559 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ559 |
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1999
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
D13801EJ1V0DS00 (1st edition)
Date Published
June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital
circuits.
FEATURES
Can be driven by a 2.5 V power source.
Low gate cut-off voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
# 20
V
Drain Current (DC)
ID(DC)
# 0.1
A
Drain Current (pulse)
Note1
ID(pulse)
# 0.4
A
Total Power Dissipation
Note2
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0cm
2
× 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
1.6
±
0.1
0.8
±
0.1
G
0.2
+0.1
–0
0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
EQUIVALENT CIRCUIT
Internal Diode
Source
Drain
Gate
Gate Protect
Diode
Marking : C1
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| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
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| 2SJ562 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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