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參數(shù)資料
| 型號(hào)： | 2SJ555-E |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 103K |
| 代理商： | 2SJ555-E |
2SJ555
Rev.3.00 Sep 07, 2005 page 4 of 7
50
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
10
20
30
40
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –50 A
ID = –60 A
–10 A, –20 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1
–0.3
–1
–3
–30
–10
–100
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.3
–1
–3
–10
–30
–100
1000
500
100
200
50
10
20
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
50000
10000
20000
5000
500
200
2000
1000
100
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
80
160
240
320
400
VDS
VGS
1000
100
200
500
50
20
10
–0.3
–1
–3
–30
–10
–100
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–20 A
–50 A
–10 A
VGS = –10 V, VDD = –30 V
PW = 10
s, duty ≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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