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參數(shù)資料
| 型號： | 2SJ555-E |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SJ555-E |
2SJ555
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
0
–20
–40
–60
–80
0
–1–2–3–4–5
Tc = 75°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–4 V
–3.5 V
–4.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–100
–300
–10
–30
–0.3
–1
–3
–0.1
–0.3
–1
–3
–10
–30
–100
–1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0
–4
–8
–12
–16
–20
Pulse Test
ID = –50 A
–20 A
–5 A
–10 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
–3
–100 –300
–1
–30
–10
–1000
100
50
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ557 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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