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參數(shù)資料
| 型號(hào)： | 2SJ557A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | 2SJ557A |
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MOS FIELD EFFECT TRANSISTOR
2SJ557A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D19059EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ557A is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
4 V drive available
Low on-state resistance
RDS(on)1 = 100 m
Ω MAX. (VGS = 10 V, ID = 1.0 A)
RDS(on)2 = 134 m
Ω MAX. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)3 = 166 m
Ω MAX. (VGS = 4.0 V, ID = 1.0 A)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557A
3-pin Mini Mold (Thin Type) (SC-96)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
ID(DC)
m2.5
A
Drain Current (pulse)
Note1
ID(pulse)
m10
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board of 2500 mm
2 x 1.6 mm, copper foil 100%, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD
±180 V TYP. at C = 200 pF, R = 0 Ω, Single Pulse.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8
±
0.2
1.5
0.95
1
2
3
1.9
2.9
±0.2
0.95
0.65
+0.1 –0.15
1: Gate
2: Source
3: Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Marking: XS
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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