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參數(shù)資料
| 型號(hào)： | 2SJ517YYTR-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SJ517YYTR-E |
2SJ517
Rev.4.00 Sep 07, 2005 page 4 of 6
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –2 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
10
5
1
2
0.2
0.5
0.1
–0.1
–0.2
–0.5
–2
–1
–5
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–20
500
100
200
5
10
20
50
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–4
–8
–12
–16
–20
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
20
50
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
500
100
200
50
10
20
5
–0.2
–0.5
–1
–2
–5
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –5 V
–10 V
VDD = –5 V
–10 V
–4 V
VGS = –2.5 V
–1 A
–0.5 A
–0.5 A, –1 A, –2 A
VGS = –4 V, VDD = –10 V
duty
≤ 1 %
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