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參數(shù)資料
| 型號： | 2SJ517YYTR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2SJ517YYTR-E |
2SJ517
Rev.4.00 Sep 07, 2005 page 3 of 6
Main Characteristics
2.0
0.5
0
1.0
1.5
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Test Condition:
When using the aluminum ceramic
board (12.5
× 20 × 70 mm)
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–0.1
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–3
–0.3
–0.03
Operation in
this area is
limited by RDS (on)
Ta = 25°C
PW
= 10
ms
(1
shot)
–5
–4
–3
0
–1
–2
0
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
–3 V
Pulse Test
–2.5 V
–2
–4
–6
–8
–10
–5
0
–1
–2
–3
–4
0
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = 75°C
–25°C
25°C
VDS = –10 V
Pulse Test
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
–2
–4
–6
–8
–10
Pulse Test
ID = –2 A
–0.5 A
–1 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.05
0.1
0.01
0.02
–10
–4 V
VGS = –2.5 V
Pulse Test
–0.1 –0.2
–0.5
–1
–2
–5
100
s
10
s
DC
Operation
1 ms
VGS = –1.5 V
–10 V
–2 V
–4 V
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