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參數(shù)資料
| 型號(hào)： | 2SJ517YYTR-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SJ517YYTR-E |
2SJ517
Rev.4.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
–2
A
Drain peak current
ID (pulse)
Note 1
–4
A
Body to drain diode reverse drain current
IDR
–2
A
Channel dissipation
Pch
Note 2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100 s, duty cycle ≤ 10%
2. When using the aluminium ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–20
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±10
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –20 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±8 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.5
—
–1.5
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.18
0.24
ID = –1 A, VGS = –4 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.27
0.43
ID = –1 A, VGS = –2.5 V
Note 3
Forward transfer admittance
|yfs|
1.8
3.0
—
S
ID = –1 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
320
—
pF
Output capacitance
Coss
—
190
—
pF
Reverse transfer capacitance
Crss
—
90
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
14
—
ns
Rise time
tr
—
75
—
ns
Turn-off delay time
td (off)
—
90
—
ns
Fall time
tf
—
90
—
ns
VGS = –4 V
ID = –1 A
RL = 10
Body to drain diode forward voltage
VDF
—
–0.95
—
V
IF = –2 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
70
—
ns
IF = –2 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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