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參數(shù)資料
| 型號(hào)： | 2SJ505S-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 78K |
| 代理商： | 2SJ505S-E |
2SJ505(L), 2SJ505(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–50
A
Drain peak current
I
D(pulse)*
1
–200
A
Body to drain diode reverse drain current
I
DR
–50
A
Avalanche current
I
AP*
3
–50
A
Avalanche energy
E
AR*
3
214
mJ
Channel dissipation
Pch*
2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Ta = 25
°C, Rg ≥ 50 , L=100H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ505L | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ505S | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ507 | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ517 | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ549L | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ505STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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