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參數(shù)資料
| 型號： | 2SJ505S-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大小： | 78K |
| 代理商： | 2SJ505S-E |
2SJ505(L), 2SJ505(S)
6
1000
500
200
50
100
20
10
–0.1 –0.3
–3
0
–10
–20
–30
–40
–50
2000
1000
500
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
40
80
120
160
200
1000
200
500
100
20
50
10
–0.1 –0.3
–1
–3
–10
–1
–30
200
100
DS
V
GS
V
= –50 V
–25 V
–10 V
DD
–100
V
= –50 V
–25 V
–10 V
DD
5000
–30
–100
r
t
d(off)
t
t f
d(on)
t
–10
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
V
= –10 V, V
= –30 V
PW = 10
s, duty < 1 %
GS
DD
=
I = –50 A
D
10000
20000
50000
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Switching
Time
t
(ns)
Switching Characteristics
Drain Current
I
(A)
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ505L | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ505S | 50 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ507 | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ517 | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ549L | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ505STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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