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參數(shù)資料
| 型號： | 2SJ507 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-5J1C, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 145K |
| 代理商： | 2SJ507 |
2SJ507
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ507
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.5 (typ.)
High forward transfer admittance
: |Yfs| = 1.0 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
1
A
Drain current
Pulse (Note 1)
IDP
3
A
Drain power dissipation
PD
0.9
W
Single pulse avalanche energy
(Note 2)
EAS
249.6
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
0.09
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 339 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
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