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參數(shù)資料
| 型號(hào)： | 2SJ507 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-5J1C, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 145K |
| 代理商： | 2SJ507 |
2SJ507
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 0.5 A
—
0.72
1.0
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
—
0.5
0.7
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.5 A
0.5
1.0
—
S
Input capacitance
Ciss
—
170
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
72
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
35
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
—
135
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
5.6
—
Gatesource charge
Qgs
—
3.9
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V,
ID = 1 A
—
1.7
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
1
A
Pulse drain reverse current
(Note 1)
IDRP
—
3
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
58
—
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V
dIDR / dt = 50 A / s
—
72.5
—
nC
Marking
J507
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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