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參數(shù)資料
| 型號(hào)： | 2SJ462 |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 12 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | 2SJ462 |
2SJ462
4
SWITCHING CHARACTERISTICS
ID - Draint Current - A
–0.1
–1
–10
VDD = –3 V
VGS(on) = –3 V
Rin = 10
td(on)
,t
r,t
d(off)
,t
f-
Switching
Time
-
ns
10
100
1000
tr
td(on)
tf
td(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
ID
-
Reverse
Drain
Current
-
A
–0.001
–0.01
–0.1
–1
–10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
0
–2
–4
–6
–8
–10
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
0.1
0.2
0.3
ID = –2.5 A
–1.0 A
–0.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.001
–0.01
–0.1
–1
–10
0.2
0
0.1
0.3
0.4
0.5
0.6
TA = 125 C
75 C
25 C
–25 C
VGS = –4 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
–0.1
–1
–10
Ciss,Coss,Crss
-
Capacitance
-
pF
1
10
0.1
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
0
8
16
24
32
40
V
DS
-
Drain
to
Source
Voltage
-
V
0
4
8
12
V
GS
-
Gate
to
Source
Voltage
-
V
0
2
4
8
VDS
VGS
VDS = –8 V
ID = –2.5 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
| 2SJ463 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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