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參數(shù)資料
| 型號(hào)： | 2SJ462 |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 12 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT PACKAGE-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | 2SJ462 |
2SJ462
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
–0.001
–0.01
–0.1
–1
–10
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0.2
0
0.1
0.3
0.4
0.5
0.6
VGS = –2.5 V
TA = 125 C
75 C
25 C
–25 C
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
0
–0.5
–1.0
–1.5
–2.0
–2.5
ID
-
Drain
Current
-
A
–0.0001
–10
–0.001
–0.1
–1
–0.01
TA = 75 C
TA = 25 C
TA = –25 C
TA = 125 C
VDS = –3 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
–0.0001
–0.001
–0.01
–0.1
–1
IyfsI
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
25 C
75 C
125 C
TA = –25 C
VDS = –3 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Draint to Source Voltage - V
0
–2
–4
–6
–8
–10
ID
-
Drain
Current
-
A
0
–1
–2
–3
–4
–5
VGS = –1 V
–2 V
–4 V
–5 V
–3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - C
0
30
60
90
120
150
0
20
dT
-
Derating
Factor
-
%
40
60
80
100
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
–1
–10
–100
–1
–10
–0.1
Single Pulse
ID
-
Drain
Current
-
A
DC
PW
=
100
ms
10
ms
1 ms
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| 2SJ476-01S | 25 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L-E | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
| 2SJ463 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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