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參數(shù)資料
| 型號： | 2SJ462 |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 12 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT PACKAGE-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 173K |
| 代理商： | 2SJ462 |
2SJ462
2
ELECTRICAL SPECIFICATIONS (TA = +25 C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Conditions
Drain Cut-off Current
IDSS
–10
AVDS = –12 V, VGS = 0
Gate Leakage Current
IGSS
±10
AVGS = ±8.0 V, VDS = 0
Gate Cut-off Voltage
VGS(off)
–0.7
–1.0
–1.3
V
VDS = –3.0 V, ID = –1.0 mA
Forward Transfer Admittance
|yfs|
1.5
S
VDS = –3.0 V, ID = –1.0 A
Drain to Source On-State
RDS(on)1
195
290
m
VGS = –2.5 V, ID = –0.5 A
Resistance
Drain to Source On-State
RDS(on)2
135
190
m
VGS = –4.0, ID = –1.0 A
Resistance
Input Capacitance
Ciss
940
pF
VDS = –3.0 V, VGS = 0
Output Capacitance
Coss
835
pF
f = 1.0 MHz
Reverse Transfer Capacitance
Crss
495
pF
Turn-On Delay Time
td(on)
45
ns
VDD = –3.0 V, ID = –1.0 A
Rise Time
tr
225
ns
VGS(on) = –3.0 V, RG = 10
Turn-Off Delay Time
td(off)
140
ns
RL = 3.0
Fall Time
tf
195
ns
Total Gate Charge
QG
12
nC
VDS = –8 V, ID = –2.5 A
Gate to Source Charge
QGS
2nC
VGS = –3.0 V, IG = –2 mA
Gate to Drain Charge
QGD
7nC
Diode Forward Voltage
VF(S–D)
–0.86
V
IF = –2.5 A, VGS = 0
Reverse Recovery Time
trr
150
ns
IF = –2.5 A, VGS = 0
Reverse Recovery Charge
Qrr
160
nC
di/dt = 50 A/
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
| 2SJ463 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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