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參數(shù)資料
| 型號： | 2SJ448 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 2SJ448 |
2SJ448
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3.0
V
GS
- Gate to Source Voltage - V
R
D
0
–5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
I
D
- Drain Current - A
R
D
2.0
–0.1
V
= –10 V
Pulsed
–1.0
1.0
10
100
–10
–100
1.0
–10
–15
Pulsed
4.0
–1.0
–10
Pulsed
0
6.0
–2.0
V
DS
= –10 V
I
D
= –1 mA
–4.0
–6.0
–8.0
–50
0
50
100
150
0
0.1
2.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
Single Pulse
Rth
(ch-c)
= 4.17 C/W
–0.1
V
GS
= –10 V
μ
μ
R
th(ch-a)
= 62.5 C/W
T
A
= –25 C
25 C
75 C
125 C
I
D
= –4 A
–2 A
–0.8 A
相關(guān)PDF資料 |
PDF描述 |
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| 2SJ449 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ456 | Ultrahigh-Speed Switching Applications |
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| 2SJ480 | TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ448-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 250V 4A 3-Pin(3+Tab) TO-220 Isolated |
| 2SJ449 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ449-AZ | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,250V,6.0A,0.55ohm,isoTO-220 |
| 2SJ450 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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