參數(shù)資料
型號: 2SJ448
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關P溝道功率MOS FET工業(yè)用
文件頁數(shù): 2/8頁
文件大?。?/td> 121K
代理商: 2SJ448
2SJ448
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
1.5
2.0
V
GS
= –10 V, I
D
= –20 A
Gate to Source Cutoff Voltage
V
GS(off)
–4.0
–4.8
–5.5
V
DS
= –10 V, I
D
= –1 mA
Forward Transfer Admittance
| y
fs
|
1.0
2.3
V
DS
= –10 V, I
D
= –20 A
Drain Leakage Current
I
DSS
–100
V
DS
= –250 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
m
10
V
GS
=
m
25 V, V
DS
= 0
Input Capacitance
C
iss
470
V
DS
= –10 V
Output Capacitance
C
oss
200
V
GS
= 0
Reverse Transfer Capacitance
C
rss
70
f = 1 MHz
Turn-On Delay Time
t
d(on)
13
I
D
= –2.0 A
Rise Time
t
r
7
V
GS(on)
= –10 V
Turn-Off Delay Time
t
d(off)
34
V
DD
= –125 V
Fall Time
t
f
10
R
G
= 10
Total Gate Charge
Q
G
15
I
D
= –4.0 A
Gate to Source Charge
Q
GS
4
V
DD
= –200 V
Gate to Drain Charge
Q
GD
9
V
GS
= –10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= –4.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
195
I
F
= –4.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
760
di/dt = 50 A/
μ
s
UNIT
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= –20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= –2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
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