- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49988 > 2SJ411-AZ 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ411-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 96K |
| 代理商： | 2SJ411-AZ |
2SJ411
3
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0–2
–3
VDS - Drain to Source Voltage - V
–2
–3
–5
ID
-
Drain
Current
-
A
–1
–4
–1
–5
VGS = –2.0 V
–2.5 V
–3.0 V
–3.5 V
–4.0 V
–4.5
V
10
V
Pulsed
TRANSFER CHARACTERISTICS
0–2
–3
VGS - Gate to Source Voltage - V
–0.1
–1
–20
ID
-
Drain
Current
-
A
–1
–4
–0.01
–5
TA = –25 C
VDS = –10 V
Pulsed
–10
TA = 75 C
TA = 25 C
–0.001
TA = 125 C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
–0.01
ID - Drain Current - A
1
10
|y
fs
|-
Forward
Transfer
Admittance
-
S
–0.1
0.1
–10
VDS = –10 V
Pulsed
–1
TA = 75 C
TA = 25 C
TA = 125 C
TA = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–0.01
ID - Drain Current - A
0.2
0.3
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.1
0
–10
VGS = –4 V
Pulsed
–1
0.1
TA = 125 C
TA = 75 C
TA = 25 C
TA = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–0.01
ID - Drain Current - A
0.2
0.3
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.1
0
–20
VGS = –7 V
Pulsed
–1
0.1
–10
TA = 125 C
TA = 75 C
TA = 25 C
TA = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–0.01
ID - Drain Current - A
0.2
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.1
0
–20
VGS = –10 V
Pulsed
–1
0.1
–10
TA = 125 C
TA = 75 C
TA = 25 C
TA = –25 C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ413 | 50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ416 | 2 A, 30 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ438 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ440-Y | 9 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ440 | 9 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。