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參數(shù)資料
| 型號(hào)： | 2SJ411-AZ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SJ411-AZ |
2SJ411
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –30 V, VGS = 0
–10
A
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –2.5 A
3.0
S
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –2.5 A
0.175
0.24
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –2.5 A
0.096
0.11
Input Capacitance
Ciss
VDS = –10 V, VGS = 0
790
pF
Output Capacitance
Coss
f = 1.0 MHz
580
pF
Reverse Transfer Capacitance
Crss
280
pF
Turn-On Delay Time
td(on)
VDD = –15 V, ID = –2.5 A
10
ns
Rise Time
tr
VGS(on) = –10 V
110
ns
Turn-Off Delay Time
td(off)
RG = 10
, RL = 6
195
ns
Fall Time
tf
185
ns
Gate Input Charge
QG
VDS = –24 V
29.8
nC
Gate to Source Charge
QGS
VGS = –10 V
2.7
nC
Gate to Drain Charge
QGD
ID = –5.0 A, IG = –2 mA
11.5
nC
Internal Diode Forward Voltage
VF(S-D)
IF = 5.0 A, VGS = 0
1.0
V
Internal Diode Reverse Recovery Time
trr
IF = 5.0 A, VGS = 0
140
ns
Internal Diode Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
160
nC
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0
25
50
75
125
150
TA - Ambient Temperature - C
20
40
60
80
100
dT
-
Derating
Factor
-
%
FORWARD BIAS SAFE OPERATING AREA
–0.5
–5
–10
–50
–100
ID
-
Drain
Current
-
A
–0.2
–0.1
0
100
–1
–5
–10
–50
–100
VDS - Drain to Source Voltage - V
–2
–20
DC
PW
= 100
mS
PW
= 10
mS
PW
= 1
mS
RDS(on)
Limited
ID(DC) = –5 A
ID(pulse) = –20 A
TC = 25 C
Single pulsed
–1
–2
–20
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| 2SJ440-Y | 9 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM |
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