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參數(shù)資料
| 型號： | 2SJ413 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | 2SJ413 |
2SJ413
No.5366-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
PW
≤10s, duty cycle≤1%
--50
A
Drain Current (Pulse)
IDP
--200
A
Allowable Power Dissipation
PD
3.0
W
Tc=25
°C70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG=±100A, VDS=0V
±20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--100
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.0
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--25A
27
45
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--25A, VGS=--10V
15
20
m
RDS(on)2
ID=--25A, VGS=--4V
20
30
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
7600
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
2400
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
600
pF
Marking : J413
Continued on next page.
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN5366B
N0806QA SY IM / 60100TS (KOTO) TA-2633
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SJ413
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ416 | 2 A, 30 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ438 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ440-Y | 9 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ440 | 9 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ448 | 4 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ414 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ415 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) |
| 2SJ416 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ417 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ418 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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