參數(shù)資料
型號: 2SJ389L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 8/10頁
文件大?。?/td> 64K
代理商: 2SJ389L
2SJ389(L), 2SJ389(S)
8
–20
–16
–12
–8
-4
0
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0, 5 V
V = –10 V
–5 V
–0.4
–0.8
–1.2
–1.6
–2.0
10
8
6
4
2
Channel Temperature Tch (°C)
R
A
Maximun Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
I = –10 A
V = –25 V
duty < 0.1 %
Rg > 50
D. U. T
Rg
I
Monitor
V
Monitor
V
DD
50
Vin
–15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = 2
1
V
V – V
AP
DSS
DD
2
Avalanche Test Circuit and Waveform
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