參數(shù)資料
型號: 2SJ389L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 7/10頁
文件大?。?/td> 64K
代理商: 2SJ389L
2SJ389(L), 2SJ389(S)
7
0
–10
–20
–30
-40
–50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
300
100
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
–20
–40
–60
–80
0
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
–100
G
G
Dynamic Input Characteristics
20
40
60
80
100
DS
V
GS
V
V = –10 V
–25 V
–50 V
V = –50 V
–25 V
–10 V
I = –10 A
Drain Current I (A)
S
Switching Characteristics
1000
200
500
100
20
50
10
–0.1 –0.2
–0.5
–1
–2
–5
–10
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
PW = 5 μs, duty < 1 %
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