參數(shù)資料
型號: 2SJ389L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 5/10頁
文件大?。?/td> 64K
代理商: 2SJ389L
2SJ389(L), 2SJ389(S)
5
–10
–8
–6
–4
–2
0
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Tc = –25 °C
75 °C
25 °C
–1
–2
–3
–4
–5
V = –10 V
Pulse Test
–1.0
-0.8
–0.6
-0.4
–0.2
0
–4
–8
12
–16
–20
Gate to Source Voltage V (V)
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–2 A
I = –5 A
–1 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
5
–1
–2
–5
–10 –20
–50 –100
2
1
0.2
0.5
0.1
0.05
–10 V
V = –4 V
Pulse Test
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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