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參數(shù)資料
| 型號(hào)： | 2SJ387 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ387 |
2SJ387(L), 2SJ387(S)
5
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–2
–4
–6
–8
–10
Pulse Test
I = –5 A
–1 A
–2 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.01
0.02
0.05
–0.5
–1
–2
–5
–10 –20
–50
–4 V
Pulse Test
V = –2.5 V
0.2
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–4 V
I = –5 A
–1, –2 A
V = –2.5 V
–5 A
–2 A
–1 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
50
20
10
2
5
1
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ387L | Silicon P-Channel MOS FET |
| 2SJ387S | Silicon P-Channel MOS FET |
| 2SJ388 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388L | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388S | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ387L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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