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參數(shù)資料
| 型號： | 2SJ387 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ387 |
2SJ387(L), 2SJ387(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
200
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
6.5 V, V
DS
= 0
V
DS
= –16 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –5 A
V
GS
= –4 V*
1
I
D
= –5 A
V
GS
= –2.5 V*
1
I
D
= –5 A
V
DS
= –10 V*
1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–100
V
GS(off)
R
DS(on)
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
0.05
0.07
—
0.07
0.1
Forward transfer admittance
|y
fs
|
7
12
—
S
Input capacitance
Ciss
—
1170
—
pF
Output capacitance
Coss
—
860
—
pF
Reverse transfer capacitance
Crss
—
310
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
20
—
ns
I
D
= –5 A
V
GS
= –4 V
R
L
= 2
Rise time
—
325
—
ns
Turn-off delay time
—
350
—
ns
Fall time
—
425
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
F
= –10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse Test
t
rr
—
240
—
ns
I
= –10 A, V
GS
= 0,
diF/dt = 20 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ387L | Silicon P-Channel MOS FET |
| 2SJ387S | Silicon P-Channel MOS FET |
| 2SJ388 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388L | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388S | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ387L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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