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參數(shù)資料
| 型號： | 2SJ386 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ386 |
2SJ386
5
0
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
10
20
50
–10
–20
–30
–40
–50
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
–10
–20
–30
–40
0
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
20
–50
G
G
Dynamic Input Characteristics
DS
V
GS
V
I = –3 A
4
8
12
16
V = –30 V
–20 V
–10 V
V = –30 V
–20 V
–10 V
–0.05
Drain Current I (A)
S
Switching Characteristics
200
100
20
10
2
50
5
–0.1 –0.2
–0.5
–1
–2
–5
V = –10 V, V = –30 V
PW = 2 μs, duty < 1 %
tf
r
d(off)
t
d(on)
t
–5
–4
–3
–2
–1
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
–10 V
–5 V
V = 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ387 | Silicon P-Channel MOS FET |
| 2SJ387L | Silicon P-Channel MOS FET |
| 2SJ387S | Silicon P-Channel MOS FET |
| 2SJ388 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388L | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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