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參數(shù)資料
| 型號(hào)： | 2SJ386 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ386 |
2SJ386
3
1.6
1.2
0.8
0.4
0
C
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1
–0.3
–1
–3
–10
–30
–100
100 μs
1m
PW=10m
DCOpeaion
Ta = 25 °C
1 shot pulse
Operation in
this area is
limited by R
DS(on)
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
Drain to Source Voltage V (V)
D
D
–3 V
–2.5 V
Typical Output Characteristics
–5 V
–4 V
–3.5 V
V = –2 V
Ta = 25 °C
Pulse Test
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
–5
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
75 °C
25 °C
V = –10 V
Pulse Test
Ta = –25 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ387 | Silicon P-Channel MOS FET |
| 2SJ387L | Silicon P-Channel MOS FET |
| 2SJ387S | Silicon P-Channel MOS FET |
| 2SJ388 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ388L | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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