參數(shù)資料
型號: 2SJ386
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 2/7頁
文件大?。?/td> 38K
代理商: 2SJ386
2SJ386
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch
–30
V
Gate to source voltage
±
20
V
Drain current
–3
A
Drain peak current
–5
A
Body to drain diode reverse drain current
–3
A
Channel dissipation
0.9
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –24 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –2 A
V
GS
= –10 V*
1
I
D
= –2 A
V
GS
= –4 V*
1
I
D
= –1 A
V
DS
= –10 V*
1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
–10
V
GS(off)
R
DS(on)
–1.0
–2.5
V
Static drain to source on state
resistance
0.3
0.4
0.55
0.8
Forward transfer admittance
|y
fs
|
1.0
1.7
S
Input capacitance
Ciss
177
pF
Output capacitance
Coss
120
pF
Reverse transfer capacitance
Crss
59
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
8
ns
I
D
= –2 A
V
GS
= –10 V
R
L
= 15
Rise time
28
ns
Turn-off delay time
45
ns
Fall time
60
ns
相關(guān)PDF資料
PDF描述
2SJ387 Silicon P-Channel MOS FET
2SJ387L Silicon P-Channel MOS FET
2SJ387S Silicon P-Channel MOS FET
2SJ388 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ388L Silicon P-Channel MOS FET(P溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ386TZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ387 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ387L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ387L(E) 制造商:Renesas Electronics 功能描述:Cut Tape