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參數(shù)資料
| 型號(hào)： | 2SJ361 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ361 |
2SJ361
5
–0.5
–0.4
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
Gate to Source Voltage V (V)
V
D
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
I = –1 A
–0.5 A
–0.2 A
Drain Current I (A)
D
R
D
5
Static Drain to Source on State Resistance
vs. Drain Current
3
1
0.3
0.1
–0.1
–0.3
–1
–3
–10
Pulse Test
–2.5 V
V = –10 V
–4 V
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–10 V
V = –2.5 V
–4 V
–0.5 A
–0.2 A
–1 A
–1 A
–1 A
–0.5 A
I = –0.2 A
–0.5 A
–0.2 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
1
0.3
0.1
0.3
0.01
–0.1
–0.3
–1
–3
–10
75 °C
Tc = –25 °C
25 °C
V = –10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ362 | Very High-Speed Switching Applications |
| 2SJ363 | Silicon P-Channel MOS FET |
| 2SJ381 | Ultrahigh-Speed Switching Applications |
| 2SJ382 | Very High-Speed Switching Applications |
| 2SJ384 | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ362 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ363 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ364 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For analog switch |
| 2SJ365 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:60V SERIES POWER MOSFET |
| 2SJ366 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR |
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