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參數(shù)資料
| 型號(hào)： | 2SJ361 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ361 |
2SJ361
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –16 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –1 A, V
GS
= –10 V
I
D
= –0.4 A, V
GS
= –2.5 V
I
D
= –1 A, V
DS
= –10 V
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–10
V
GS(off)
R
DS(on)
–0.5
—
–1.5
V
Static drain to source on state
—
0.28
0.4
resistance
—
0.85
1.5
Forward transfer admittance
|y
fs
|
Ciss
0.15
0.3
—
S
Input capacitance
—
3.2
—
pF
Output capacitance
Coss
—
130
—
pF
Reverse transfer capacitance
Crss
—
0.6
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
350
—
ns
I
D
= –1 A, V
GS
= –10 V,
R
L
= 10
Rise time
—
1650
—
ns
Turn-off delay time
—
7280
—
ns
Fall time
—
6950
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
F
= –2 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
530
—
ns
I
F
= –2 A, V
GS
= 0,
di
F
/dt = 20 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ362 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ363 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ364 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For analog switch |
| 2SJ365 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:60V SERIES POWER MOSFET |
| 2SJ366 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR |
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