參數(shù)資料
型號(hào): 2SJ361
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 43K
代理商: 2SJ361
2SJ361
4
2.0
1.5
1.0
0.5
0
C
(
50
100
150
200
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.05 –0.1
–0.3
–1
–3
–10
–30
100μs
PW=10ms(1sho)
Operation in
this area is
limited by R
DS(on)
10μs
Ta = 25 °C
1ms
DCOpeaion
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
Drain to Source Voltage V (V)
D
D
–3 V
–2.5 V
Typical Output Characteristics
V = –1.5 V
–10 V
–5 V
–4 V
–3.5 V
–2 V
Pulse Test
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1
–2
–3
–4
–5
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
75 °C
Tc = –25 °C
25 °C
V = –10 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SJ362 Very High-Speed Switching Applications
2SJ363 Silicon P-Channel MOS FET
2SJ381 Ultrahigh-Speed Switching Applications
2SJ382 Very High-Speed Switching Applications
2SJ384 Silicon P-Channel MOS FET(P溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SJ363 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
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2SJ366 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR