參數(shù)資料
型號: 2SJ333L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 1/8頁
文件大?。?/td> 57K
代理商: 2SJ333L
2SJ333(L), 2SJ333(S)
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
123
123
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
相關(guān)PDF資料
PDF描述
2SJ333 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ333S Silicon P-Channel MOS FET(P溝道MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ333S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ334 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 30A 3PIN SC-67 - Rail/Tube
2SJ334(F) 功能描述:MOSFET MOSFET P-Ch 60V 30A Rdson 0.038 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ334(F,T) 功能描述:MOSFET MOSFET P-Ch 60V 30A Rdson 0.038 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ334_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications