- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370097 > 2SJ297S (Hitachi,Ltd.) Silicon P-Channel MOS FET(P溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號： | 2SJ297S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2SJ297S |
2SJ297(L), 2SJ297(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –10 A, V
GS
= –10 V*
I
D
= –10 A, V
GS
= –4 V*
I
D
= –10 A, V
DS
= –10 V*
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.25
V
Static drain to source on state
—
0.05
0.065
S
1
resistance
—
0.07
0.095
1
Forward transfer admittance
|y
fs
|
Ciss
10
16
—
1
Input capacitance
—
2200
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
300
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
25
—
ns
I
D
= –10 A, V
GS
= –10 V,
R
L
= 3
Rise time
—
130
—
ns
Turn-off delay time
—
320
—
ns
Fall time
—
210
—
ns
Body to drain diode forward
voltage
—
–1.1
—
V
I
F
= –20 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
160
—
ns
I
F
= –20 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SJ291
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ302 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ302-Z | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ303 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ307 | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(用于超高速轉換應用的P溝道MOSFET) |
| 2SJ308 | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉換應用P溝道硅MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ302 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Mos Field Effect Power Transistor |
| 2SJ302-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -16A 100m@10V TO220AB Bulk |
| 2SJ302-Z | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-263VAR |
| 2SJ302-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 16A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ302-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。